Demonstration of Threshold Switching and Bipolar Resistive Switching in Ag/SnOx/TiN Memory Device

In this work, we observed the duality of threshold switching and non-volatile memory switching of Ag/SnOx/TiN memory devices by controlling the compliance current (CC) or pulse amplitude. The insulator thickness and chemical analysis of the device stack were confirmed by transmission electron microscope (TEM) images of the Ag/SnOx/TiN stack and X-ray photoelectron spectroscopy (XPS) of the SnOx film. The threshold switching was achieved at low CC (50 mu A), showing volatile resistive switching. Optimal CC (5 mA) for bipolar resistive switching conditions with a gradual transition was also found. An unstable low-resistance state (LRS) and negative-set behavior were observed at CCs of 1 mA and 30 mA, respectively. We also demonstrated the pulse operation for volatile switching, set, reset processes, and negative-set behaviors by controlling pulse amplitude and polarity. Finally, the potentiation and depression characteristics were mimicked by multiple pulses, and MNIST pattern recognition was calculated using a neural network, including the conductance update for a hardware-based neuromorphic system.

Automated summary

This work demonstrates the dual nature of threshold switching and non-volatile memory switching in Ag/SnOx/TiN memory devices, with the performance being influenced by different current values. Variations in resistance states at different CC values, as well as the application of pulse operation in volatile switching, set, reset, and negative-set behaviors, were observed during experiments.