期刊
METALS
卷 11, 期 10, 页码 -出版社
MDPI
DOI: 10.3390/met11101572
关键词
memory device; resistive switching; memristor; ZnO
资金
- National Research Foundation of Korea (NRF) - Ministry of Science and ICT [2021R1C1C1004422]
- National Research Foundation of Korea [2021R1C1C1004422] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this work, the characteristics of Ni/ZnO/n-type Si RRAM device under different compliance currents were studied, showing the best variability at higher compliance current (5 mA) and proposing the appropriate compliance current for device operation. Comprehensive evaluation of device characteristics was conducted through statistical analysis and validation.
In this work, we conducted the following analysis of Ni/ZnO (20 nm)/n-type Si RRAM device with three different compliance currents (CCs). We compared I-V curves, including set, reset voltages, and resistance of LRS, HRS states for each CCs. For an accurate comparison of each case, statistical analysis is presented. In each case, the average value and the relative standard deviation (RSD) of resistance are calculated to analyze the characteristics of the distribution. The best variability is observed at higher CC (5 mA). In addition, we validated the non-volatile properties of the device using the retention data for each of the CCs. Based on this comparison, we proposed the most appropriate CC of the device operation. Also, a pulse was applied to measure the current waveform and demonstrate the regular operation of the device. Finally, the resistance of LRS and HRS states was measured by pulse. We statistically compared the measured pulse data with the DC data.
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