期刊
NANO ENERGY
卷 91, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.nanoen.2021.106706
关键词
Thermoelectric; N-type PbTe; Ag2Te; Dynamic doping; Coherent interfaces; Energy filtering
类别
资金
- National Key Research and Development Program of China [2018YFA0702100]
- National Natural Science Foundation (NNSF) of China [51771126]
- NNSF of China
- Chinese Academy of Sciences' Large-Scale Scientific Facility [U1932106]
- Sichuan University Innovation Research Program of China [2020SCUNL112]
- Australian Research Council
- HBIS-UQ Innovation Centre for Sus-tainable Steel (ICSS) project
By introducing Ag2Te and dynamically doping silver into n-type Pb0.975Cr0.025Te, a peak figure of merit of 1.5 at 773K was achieved. The high value is attributed to the synergistic optimization of carrier and phonon transports. Ag2Te nanoprecipitates establish coherent interfaces with the matrix to induce energy-dependent carrier scattering and maintain relatively high carrier mobility, leading to optimal electrical-transport properties over a wide temperature range.
The development of n-type high-performance PbTe thermoelectric materials for matching its p-type counterparts is an urgent matter to expand its practical applications. Here, we introduce Ag2Te into n-type Pb0.975Cr0.025Te for achieving a high peak figure of merit of 1.5 at 773 K. Such a high value is attributed to the synergistic optimization of carrier and phonon transports by Ag2Te introducing and the dynamic doping of Ag. From the detailed structure and property analysis, we found that Ag2Te nanoprecipitates establish coherent interfaces and hence potential barriers with the matrix to induce energy-dependent carrier scattering and maintain relatively high carrier mobility, leading to an optimal electrical-transport properties over a wide temperature range. Moreover, we employ comprehensive electron microscopy investigations and approximate Debye-Callaway model to reveal the origin of the significantly reduced lattice thermal conductivity in Ag2Te-alloyed Pb0.975Cr0.025Te. The strategies used here provide an effective method for designing high-performance thermoelectric material systems.
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