期刊
MICROMACHINES
卷 13, 期 1, 页码 -出版社
MDPI
DOI: 10.3390/mi13010084
关键词
AlGaN; GaN; critical voltage; degradation; off-state stress; inverse piezoelectric effect; high temperature; Schottky barrier height; reliability instability
类别
资金
- National Research Foundation of Korea (NRF)
- Korean government (MSIP
- Ministry of Science, ICT and Future Planning) [NRF-2019R1A2C1009816, NRF-2019M3F5A1A01076973]
- National Research Foundation of Korea [2019M3F5A1A01076767, 4199990113964] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature. The Pt/Ti/Pt/Au HEMT showed a reduced reverse leakage current under off-state stress condition, while the Ni/Au HEMT showed an increased reverse leakage current. As the temperature increased, the reverse leakage current of the Pt/Ti/Pt/Au HEMT decreased, while that of the Ni/Au HEMT increased. However, at temperatures exceeding 308 K, the reverse leakage current of the Pt/Ti/Pt/Au HEMT increased, which could be intensified using the inverse piezoelectric effect.
The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature. Under the off-state stress condition, Pt/Ti/Pt/Au HEMT showed abruptly reduced reverse leakage current, which improved the Schottky barrier height (SBH) from 0.46 to 0.69 eV by suppression of the interfacial donor state. As the temperature increased, the reverse leakage current of the Pt/Ti/Pt/Au AlGaN/GaN HEMT at 308 K showed more reduction under the same off-state stress condition while that of the Ni/Au AlGaN/GaN HEMT increased. However, with temperatures exceeding 308 K under the same off-state stress conditions, the reverse leakage current of the Pt/Ti/Pt/Au AlGaN/GaN HEMT increases, which can be intensified using the inverse piezoelectric effect. Based on this phenomenon, the present work reveals the necessity for analyzing the concurrent SBH and reliability instability due to the interfacial trap states of the MS contacts.
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