Air-processed stable near-infrared Si-based perovskite light-emitting devices with efficiency exceeding 7.5%

Organic perovskite materials have attracted considerable attention because of their potential applications in various types of opto-electronic devices. Nowadays, obtaining high-performance devices fabricated in ambient atmosphere is a challenge. In this study, we report Si-based near-infrared (NIR) perovskite light-emitting devices (PeLEDs) with enhanced efficiency by an air-processed technique with two composite layers. One layer is constructed using 4,4 '-bis(N-carbazolyl)-1,1 '-biphenyl (CBP) with poly-TPD coating as a hole transport layer (HTL) to balance carrier injection, and the other is constructed doping poly(methyl methacrylate) (PMMA) with antisolvent to passivate defects and protect MAPbI(3) from degradation by water and oxygen. Through these two composite layers, the EL performance is enhanced with an external quantum efficiency (EQE) of 7.5%, and the stability is also improved to 200 min after the introduction of another m-PMMA layer. Our results provide a simple way to manufacture high-efficiency and stable PeLEDs under air condition.

Automated summary

This study reports Si-based near-infrared perovskite light-emitting devices with enhanced efficiency by using two composite layers. The hole transport layer is constructed to balance carrier injection, while the other layer is used to passivate defects and protect the material from degradation. Through these composite layers, the EL performance is improved with an external quantum efficiency of 7.5%, and stability is enhanced to 200 min after the introduction of another layer. The results provide a simple way to manufacture high-efficiency and stable PeLEDs under air condition.