Modeling and Simulation of High-Performance CrTe Intrinsic Half Metal-Based Spin Valve and Spin Diode

Most of the pristine two-dimensional materials such as graphene, silicene, germanene etc. are non-magnetic in nature and the creation of magnetism in these materials is subjected to the doping, external field, vacancy, strain etc., but their control in the experimental is very difficult. That has motivated the researchers for the exploration of 2D materials like Transition metal chalcogenides (TMC) with intrinsic magnetism. In the present study, the ferromagnetism of the two-dimensional Chromium telluride (CrTe) is verified by the spin-dependent density of states. Moreover, taking into consideration the similar crystal structure and comparable lattice constants of Vanadium telluride (VTe) to that of CrTe, we have modelled a three-layer spin valve (CrTe-VTe-CrTe) and a two-layer spin diode (CrTe-VTe), and simulated for spin-dependent transport characteristics. The performance parameters like spin injection efficiency, magnetoresistance, rectification ratio has been calculated to carry out the performance evaluation of the modelled devices. The spin valve displays 100% spin injection efficiency and large magnetoresistance of 3.46 x 10(8)%, a comparative study has been carried out to evaluate the performance of the modelled spin valve. Moreover, the spin diode displays high spin filtering efficiency and good rectification ratio, which suggests the potential spintronic applications of the proposed devices. The spin-dependent transport characteristics have been justified by using spin-dependent transmission spectrum and spin-dependent band structure. (c) 2022 The Electrochemical Society (ECS). Published on behalf of ECS by IOP Publishing Limited.

Automated summary

The study verifies the ferromagnetism of two-dimensional Chromium telluride and evaluates the performance of modeled devices by simulating the spin-dependent transport characteristics of three-layer spin valve and two-layer spin diode. The spin valve demonstrates high spin injection efficiency and large magnetoresistance, while the spin diode shows high spin filtering efficiency and good rectification ratio, indicating potential spintronic applications for the proposed devices.