期刊
ADVANCED OPTICAL MATERIALS
卷 10, 期 3, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.202102353
关键词
ferroelectrics; light transmission; optical materials; optical memory; optical transistor
资金
- Labex NIE [0058_NIE]
- Alsace region
- EU [766726]
- CEA
- French National Research Agency (ANR) through the SANTA project [18-CE24-0018-01]
The realization of an optical transistor through light-induced charge generation and distribution processes has the potential to impact optical transmission with memory effects and nonlinearity, advancing room temperature optical transistors, memristors, modulators, and all-optical logic circuits. This opens up new possibilities for efficient optical computing and data processing without the need for coherent operation.
Following how the electrical transistor revolutionized the field of electronics, the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as an optical transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all-optical logic circuits.
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