Ultrafast Spin-Charge Conversion at SnBi2Te4/Co Topological Insulator Interfaces Probed by Terahertz Emission Spectroscopy

Spin-to-charge conversion (SCC) involving topological surface states (TSS) is one of the most promising routes for highly efficient spintronic devices for terahertz (THz) emission. Here, the THz generation generally occurs mainly via SCC consisting in efficient dynamical spin injection into spin-locked TSS. In this work, sizable THz emission from a nanometric thick topological insulator (TI)/ferromagnetic junction-SnBi2Te4/Co-specifically designed to avoid bulk band crossing with the TSS at the Fermi level, unlike its parent material Bi2Te3 is demonstrated. THz emission time domain spectroscopy (TDS) is used to indicate the TSS contribution to the SCC by investigating the TI thickness and angular dependence of the THz emission. This work illustrates THz emission TDS as a powerful tool alongside angular resolved photoemission spectroscopy (ARPES) methods to investigate the interfacial spintronic properties of TI/ferromagnet bilayers.

Automated summary

This study demonstrates sizable terahertz (THz) emission through a nanometric thick topological insulator (TI)/ferromagnetic junction. By employing terahertz emission time domain spectroscopy (TDS), the contribution of topological surface states (TSS) to spin-to-charge conversion (SCC) is investigated, highlighting the significance of this approach for studying interfacial spintronic properties.