期刊
ACS SUSTAINABLE CHEMISTRY & ENGINEERING
卷 9, 期 44, 页码 14918-14926出版社
AMER CHEMICAL SOC
DOI: 10.1021/acssuschemeng.1c05173
关键词
black phosphorus quantum dots; group-VA monoelemental; heterostructures; self-powered; photodetector
资金
- Hunan Key Laboratory of Two-Dimensional Materials [2018TP1010]
- Provincial Natural Science Foundation of Hunan [2019JJ50612]
- Program for Changjiang Scholars and Innovative Research Team in University [IRT_17R91]
- Hunan Provincial Innovation Foundation for Postgraduate [XDCX2020B093]
In this study, black phosphorus quantum dots were efficiently loaded on bismuth nanosheets to construct high-performance photodetectors. By building effective heterojunctions, the recombination of electron-hole pairs was effectively suppressed, leading to accelerated carrier transfer rates.
Herein, black phosphorus (BP) quantum dots (QDs) with consistent sizes are loaded on bismuth (Bi) nanosheets (NSs) uniformly to serve as hole capturers in Group-VA monoelemental heterostructures via a facile sonication approach. The as-fabricated Bi NSs-BP QD-based photodetectors exhibit 4.6 mu A/cm(2) photocurrent density at applied 0.8 V bias potential, about 4.2 times enhancement compared to Bi NSs, which contributes to the construction of type-II heterojunctions that effectively restrain the recombination of electron-hole pair and accelerates the transfer rate of carriers. Additionally, the photocurrent density of Bi NSs-BP QD-based photodetectors reaches 100 nA/cm(2) without external power supply, allowing fabricated devices to work normally in an emergency. Meanwhile, long-cycle stability measurements reveal 15% photocurrent density attenuation after 2000 bending times and 8.8% under 60 degrees bending angles. This work proves that the introduction of BP QDs significantly improves the performance of the Bi-based photodetector and provides a novel strategy to construct flexible photodetectors.
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