相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Efficiency improvement of AlGaN-based deep-ultraviolet light-emitting diodes and their virus inactivation application
Yoshiki Saito et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2021)
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Michael Kneissl et al.
NATURE PHOTONICS (2019)
Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
Hideto Miyake et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer
Ryan G. Banal et al.
AIP ADVANCES (2015)
Heteroepitaxy between wurtzite and corundum materials
Yuki Hayashi et al.
JOURNAL OF APPLIED PHYSICS (2013)
Characteristics of AlN Films Grown on Thermally-Nitrided Sapphire Substrates
Kohei Ueno et al.
APPLIED PHYSICS EXPRESS (2011)
222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
Hideki Hirayama et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2009)
Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy
Ryan G. Banal et al.
APPLIED PHYSICS LETTERS (2008)
Large-area AlN substrates for electronic applications: An industrial perspective
Robert T. Bondokov et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates
Masataka Imura et al.
JOURNAL OF CRYSTAL GROWTH (2008)
231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
Hideki Hirayama et al.
APPLIED PHYSICS LETTERS (2007)
Annihilation mechanism of threading dislocations in AlN grown by growth form modification, method using V/III ratio
Masataka Imura et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Microstructure of thick AlN grown on sapphire by high-temperature MOVPE
M. Imura et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2006)
Impact of H2-preannealing of the sapphire substrate on the crystallinity of low-temperature-deposited AIN buffer layer
M Tsuda et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)
Defect structures of AIN on sapphire(0001) grown by metalorganic vapor-phase epitaxy with different preflow sources
K Kawaguchi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2005)
Band parameters for nitrogen-containing semiconductors
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2003)