相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE
S. Bin Anooz et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
Thermodynamic and experimental studies of β-Ga2O3 growth by metalorganic vapor phase epitaxy
Ken Goto et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2021)
Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides
Zbigniew Galazka et al.
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS (2021)
Stable Electron Concentration Si-doped β-Ga2O3 Films Homoepitaxial Growth by MOCVD
Teng Jiao et al.
COATINGS (2021)
The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
Kai Fu et al.
APPLIED PHYSICS LETTERS (2021)
Rapid homoepitaxial growth of (010) β-Ga2O3 thin films via mist chemical vapor deposition
Hiroyuki Nishinaka et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)
Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy
Praneeth Ranga et al.
APPLIED PHYSICS EXPRESS (2020)
Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE
S. Bin Anooz et al.
APPLIED PHYSICS LETTERS (2020)
Thickness-dependent thermal conductivity of mechanically exfoliated β-Ga2O3 thin films
Yingying Zhang et al.
APPLIED PHYSICS LETTERS (2020)
Towards smooth (010) β-Ga2O3films homoepitaxially grown by plasma assisted molecular beam epitaxy: the impact of substrate offcut and metal-to-oxygen flux ratio
P. Mazzolini et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)
Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) β-Ga2O3
Zixuan Feng et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2020)
Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices
Yuxuan Zhang et al.
JOURNAL OF APPLIED PHYSICS (2020)
Mg acceptor doping in MOCVD (010) β-Ga2O3
Zixuan Feng et al.
APPLIED PHYSICS LETTERS (2020)
Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)
Piero Mazzolini et al.
APPLIED PHYSICS LETTERS (2020)
Temperature dependence of Ga2O3 growth by halide vapor phase epitaxy on sapphire and β-Ga2O3 substrates
Ken Goto et al.
APPLIED PHYSICS LETTERS (2020)
Point defects induced work function modulation of β-Ga2O3
B. R. Tak et al.
APPLIED SURFACE SCIENCE (2019)
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
Yuewei Zhang et al.
APL MATERIALS (2019)
Step-flow growth in homoepitaxy of β-Ga2O3 (100)-The influence of the miscut direction and faceting
R. Schewski et al.
APL MATERIALS (2019)
Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters
Zixuan Feng et al.
APL MATERIALS (2019)
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Zixuan Feng et al.
APPLIED PHYSICS LETTERS (2019)
Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3
Xiangqian Xiu et al.
JOURNAL OF SEMICONDUCTORS (2019)
Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
Zbigniew Galazka et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
Michele Baldini et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors
Susmita Ghose et al.
JOURNAL OF APPLIED PHYSICS (2017)
Fast growth rate of epitaxial β-Ga2O3 by close coupled showerhead MOCVD
Fikadu Alema et al.
JOURNAL OF CRYSTAL GROWTH (2017)
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
Keita Konishi et al.
APPLIED PHYSICS LETTERS (2017)
Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption
Patrick Vogt et al.
APPLIED PHYSICS LETTERS (2016)
Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air
K. Hoshikawa et al.
JOURNAL OF CRYSTAL GROWTH (2016)
The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy
Patrick Vogt et al.
APPLIED PHYSICS LETTERS (2015)
Brillouin zone and band structure of β-Ga2O3
Hartwin Peelaers et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Zbigniew Galazka et al.
JOURNAL OF CRYSTAL GROWTH (2014)
MBE grown Ga2O3 and its power device applications
Kohei Sasaki et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth
Shigeo Ohira et al.
APPLIED SURFACE SCIENCE (2008)
The structure of low-index surfaces of β-Ga2O3
VM Bermudez
CHEMICAL PHYSICS (2006)
Ga adlayer governed surface defect evolution of (0001)GaN films grown by plasma-assisted molecular beam epitaxy
G Koblmuller et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2005)
Large-size β-Ga2O3 single crystals and wafers
EG Víllora et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Adatom kinetics on and below the surface: The existence of a new diffusion channel
J Neugebauer et al.
PHYSICAL REVIEW LETTERS (2003)
What causes step bunching-negative Ehrlich-Schwoebel barrier versus positive incorporation barrier
MH Xie et al.
SURFACE SCIENCE (2002)
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
B Heying et al.
JOURNAL OF APPLIED PHYSICS (2000)
分享论文
