相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells
Chen Li et al.
MATERIALS & DESIGN (2020)
Role of hole confinement in the recombination properties of InGaN quantum structures
M. Anikeeva et al.
SCIENTIFIC REPORTS (2019)
Influence of 2s Bloch wave state excitations on quantitative HAADF STEM imaging
C. Wouters et al.
PHYSICAL REVIEW B (2019)
Compositional and strain analysis of In(Ga)N/GaN short period superlattices
G. P. Dimitrakopulos et al.
JOURNAL OF APPLIED PHYSICS (2018)
Theoretical study of nitride short period superlattices
I. Gorczyca et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2018)
Composition determination of multinary III/V semiconductors via STEM HAADF multislice simulations
Lennart Duschek et al.
ULTRAMICROSCOPY (2018)
Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells
L. Lymperakis et al.
PHYSICAL REVIEW MATERIALS (2018)
Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices
P. Wolny et al.
JOURNAL OF APPLIED PHYSICS (2018)
Topological insulator with negative spin-orbit coupling and transition between Weyl and Dirac semimetals in InGaN-based quantum wells
S. P. Lepkowski et al.
SCIENTIFIC REPORTS (2018)
STEMsalabim: A high-performance computing cluster friendly code for scanning transmission electron microscopy image simulations of thin specimens
Jan Oliver Oelerich et al.
ULTRAMICROSCOPY (2017)
III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures
Wei Sun et al.
SCIENTIFIC REPORTS (2017)
Band gap engineering of In(Ga) N/GaN short period superlattices
I. Gorczyca et al.
SCIENTIFIC REPORTS (2017)
Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
Dingyu Ma et al.
SCIENTIFIC REPORTS (2017)
In/GaN(0001)-(√3 x √3)R30° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices
C. Cheze et al.
APPLIED PHYSICS LETTERS (2017)
Atomap: a new software tool for the automated analysis of atomic resolution images using two-dimensional Gaussian fitting
Magnus Nord et al.
ADVANCED STRUCTURAL AND CHEMICAL IMAGING (2017)
Growth kinetics and structural perfection of (InN)1/(GaN)1-20 short-period superlattices on plus c-GaN template in dynamic atomic layer epitaxy
Kazuhide Kusakabe et al.
APPLIED PHYSICS LETTERS (2016)
Dynamic atomic layer epitaxy of InN on/in plus c-GaN matrix: Effect of In plus N coverage and capping timing by GaN layer on effective InN thickness
Akihiko Yoshikawa et al.
APPLIED PHYSICS LETTERS (2016)
Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices
Caroline Cheze et al.
JOURNAL OF APPLIED PHYSICS (2016)
Wide-bandgap semiconductor materials: For their full bloom
Shizuo Fujita
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Ab initio-based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity
Andrew I. Duff et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)
Two-dimensional electron gas in monolayer InN quantum wells
W. Pan et al.
APPLIED PHYSICS LETTERS (2014)
The discrepancies between theory and experiment in the optical emission of monolayer In(Ga)N quantum wells revisited by transmission electron microscopy
T. Suski et al.
APPLIED PHYSICS LETTERS (2014)
Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging
T. Schulz et al.
JOURNAL OF APPLIED PHYSICS (2014)
Theoretical study of InN/GaN short period superlattices to mimic disordered alloys
M. Ribeiro et al.
JOURNAL OF APPLIED PHYSICS (2014)
Understanding and controlling indium incorporation and surface segregation on InxGa1-xN surfaces: An ab initio approach
Andrew Ian Duff et al.
PHYSICAL REVIEW B (2014)
Ordering phenomena and formation of nanostructures in InxGa1-xN layers coherently grown on GaN(0001)
Sangheon Lee et al.
PHYSICAL REVIEW B (2014)
Quantitative composition determination at the atomic level using model-based high-angle annular dark field scanning transmission electron microscopy
G. T. Martinez et al.
ULTRAMICROSCOPY (2014)
Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures
J. Kioseoglou et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2 (2014)
Electronic structure of a single-layer InN quantum well in a GaN matrix
M. S. Miao et al.
APPLIED PHYSICS LETTERS (2013)
Photoluminescence and pressure effects in short period InN/nGaN superlattices
G. Staszczak et al.
JOURNAL OF APPLIED PHYSICS (2013)
Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells
Lin Zhou et al.
PHYSICAL REVIEW B (2013)
Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well
M. S. Miao et al.
PHYSICAL REVIEW LETTERS (2012)
Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward Lighting Revolution
S. T. Tan et al.
IEEE PHOTONICS JOURNAL (2012)
Composition mapping in InGaN by scanning transmission electron microscopy
Andreas Rosenauer et al.
ULTRAMICROSCOPY (2011)
Thermal diffuse scattering in transmission electron microscopy
B. D. Forbes et al.
ULTRAMICROSCOPY (2011)
Measurement of effective source distribution and its importance for quantitative interpretation of STEM images
C. Dwyer et al.
ULTRAMICROSCOPY (2010)
Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure
M. Schowalter et al.
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES (2009)
Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells
Wei Lin et al.
CRYSTAL GROWTH & DESIGN (2009)
Atomistic modeling of III-V nitrides: modified embedded-atom method interatomic potentials for GaN, InN and Ga1-xInxN
Eun Cheol Do et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2009)
Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys
I. Gorczyca et al.
PHYSICAL REVIEW B (2009)
The effect of surface strain relaxation on HAADF imaging
V. Grillo
ULTRAMICROSCOPY (2009)
Measurement of specimen thickness and composition in AlxGa1-xN/GaN using high-angle annular dark field images
Andreas Rosenauer et al.
ULTRAMICROSCOPY (2009)
Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells
E. Dimakis et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2008)
Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption
Soojeong Choi et al.
PHYSICAL REVIEW B (2008)
Influence of the static atomic displacement on atomic resolution Z-contrast imaging
V. Grillo et al.
PHYSICAL REVIEW B (2008)
A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN
C. S. Gallinat et al.
JOURNAL OF APPLIED PHYSICS (2007)
Surface reconstructions on InN and GaN polar and nonpolar surfaces
David Segev et al.
SURFACE SCIENCE (2007)
Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix
A. Yoshikawa et al.
APPLIED PHYSICS LETTERS (2007)
Misfit dislocations in In-rich InGaN/GaN quantum well structures
PMFJ Costa et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2006)
Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy
E Dimakis et al.
JOURNAL OF APPLIED PHYSICS (2005)
Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells
W Lü et al.
JOURNAL OF APPLIED PHYSICS (2004)
The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy
E Dimakis et al.
SUPERLATTICES AND MICROSTRUCTURES (2004)
Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy
MJ Hytch et al.
NATURE (2003)
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
O Ambacher et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory
A Zoroddu et al.
PHYSICAL REVIEW B (2001)