期刊
SCIENTIFIC REPORTS
卷 11, 期 1, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/s41598-021-99398-3
关键词
-
资金
- Academy of Finland [314448, 310086, 336813]
- ERC [670743]
- COST Action [CA16218]
- European Union [824109, 785219, 722923]
- Helmholtz society through program STN
- DFG [DA 1280/3-1]
- MEXT, Japan [JPMXP0112101001]
- JSPS KAKENHI [JP20H00354]
- Academy of Finland (AKA) [336813] Funding Source: Academy of Finland (AKA)
The study focused on 1/f noise in critical current Ic in h-BN encapsulated monolayer graphene contacted by NbTiN electrodes, finding fluctuations on the order of 10^(-3) and obeying a power law in the noise power spectrum. The results suggest significant fluctuations in Ic arising from variation of the proximity induced gap in the graphene junction.
We have studied 1/f noise in critical current I c in h-BN encapsulated monolayer graphene contacted by NbTiN electrodes. The sample is close to diffusive limit and the switching supercurrent with hysteresis at Dirac point amounts to similar or equal to 5 nA. The low frequency noise in the superconducting state is measured by tracking the variation in magnitude and phase of a reflection carrier signal v(rf) at 600-650 MHz. We find 1/f critical current fluctuations on the order of delta I-c/I-c similar or equal to 10(-3) per unit band at 1 Hz. The noise power spectrum of critical current fluctuations S Ic measured near the Dirac point at large, sub-critical rf-carrier amplitudes obeys the law S-Ic/I-c2 = alpha/f(beta) where alpha similar or equal to 4 x 10(-6) and beta similar or equal to 1 at f > 0.1 Hz. Our results point towards significant fluctuations in I-c originating from variation of the proximity induced gap in the graphene junction.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据