期刊
MATERIALS
卷 15, 期 2, 页码 -出版社
MDPI
DOI: 10.3390/ma15020615
关键词
black phosphorus; mechanical exfoliation; ultraviolet radiation; annealing; field-effect transistor
类别
资金
- Shaanxi Provincial Education Department [20JK0909]
This article demonstrates a mild method for thinning black phosphorus (BP) flakes. Slight ultraviolet-ozone (UVO) radiation followed by an argon plasma treatment is used to oxidize mechanically exfoliated BP flakes and remove previous ozone treatment residues. By controlling the thickness of BP flakes, low damage and efficient electronic devices are fabricated.
A mild two-step method of black phosphorus (BP) flake thinning was demonstrated in this article. Slight ultraviolet-ozone (UVO) radiation followed by an argon plasma treatment was employed to oxidize mechanically exfoliated BP flakes and remove the surface remains of previous ozone treatment. The annealing process introduced aims to reduce impurities and defects. Low damage and efficient electronic devices were fabricated in terms of controlling the thickness of BP flakes through this method. These results lead to an important step toward the fabrication of high-performance devices based on two-dimensioned materials.
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