In Situ Monitoring of Pulsed Laser Annealing of Eu-Doped Oxide Thin Films

Eu3+-doped oxide thin films possess a great potential for several emerging applications in optics, optoelectronics, and sensors. The applications demand maximizing Eu3+ photoluminescence response. Eu-doped ZnO, TiO2, and Lu2O3 thin films were deposited by Pulsed Laser Deposition (PLD). Pulsed UV Laser Annealing (PLA) was utilized to modify the properties of the films. In situ monitoring of the evolution of optical properties (photoluminescence and transmittance) at PLA was realized to optimize efficiently PLA conditions. The changes in optical properties were related to structural, microstructural, and surface properties characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The substantial increase of Eu3+ emission was observed for all annealed materials. PLA induces crystallization of TiO2 and Lu2O3 amorphous matrix, while in the case of already nanocrystalline ZnO, rather surface smoothening0related grains' coalescence was observed.

Automated summary

This study focuses on utilizing pulsed laser techniques to prepare Eu3+-doped oxide thin films, adjusting their properties through pulsed UV laser annealing in order to maximize Eu3+ photoluminescent response. The optical, structural, and surface properties were characterized using X-ray diffraction and atomic force microscopy to understand the changes induced by the annealing process.