期刊
MATERIALS
卷 15, 期 1, 页码 -出版社
MDPI
DOI: 10.3390/ma15010042
关键词
double-channel epitaxial structure; double-hump transconductance; Ga2O3 gate oxide layer; metal-oxide-semiconductor high-electron mobility transistors
In this study, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers were grown on silicon substrates using a metalorganic chemical vapor deposition system. The double-channel planar MOSHEMTs exhibited double-hump transconductance behaviors, while the devices with multiple-mesa-fin-channel array showed better gate control capability.
In this work, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers used for the fabrication of double-channel metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electron density of 1.11 x 10(13) cm(-2) and an electron mobility of 1770 cm(2)/V-s were obtained. Using a vapor cooling condensation system to deposit high insulating 30-nm-thick Ga2O3 film as a gate oxide layer, double-hump transconductance behaviors with associated double-hump maximum extrinsic transconductances (g(mmax)) of 89.8 and 100.1 mS/mm were obtained in the double-channel planar MOSHEMTs. However, the double-channel devices with multiple-mesa-fin-channel array with a g(mmax) of 148.9 mS/mm exhibited single-hump transconductance behaviors owing to the better gate control capability. Moreover, the extrinsic unit gain cutoff frequency and maximum oscillation frequency of the devices with planar channel and multiple-mesa-fin-channel array were 5.7 GHz and 10.5 GHz, and 6.5 GHz and 12.6 GHz, respectively. Hooge's coefficients of 7.50 x 10(-5) and 6.25 x 10(-6) were obtained for the devices with planar channel and multiple-mesa-fin-channel array operating at a frequency of 10 Hz, drain-source voltage of 1 V, and gate-source voltage of 5 V, respectively.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据