期刊
MATERIALS
卷 15, 期 2, 页码 -出版社
MDPI
DOI: 10.3390/ma15020534
关键词
SiC; microindentation; electroluminescence
类别
资金
- Natural Sciences and Engineering Research Council of Canada [20014807]
The influence of microindentation on the electroluminescence of silicon carbide was studied and the intensity of different spectral regions was found to be related to the initial condition of the crystal and the mechanical damage caused by indentation.
The influence of microindentation on the electroluminescence of silicon carbide was studied in forward-biased 4H SiC p-i-n junctions. Four spectral regions at approximately 390, 420, 445 and 500 nm initially observed on virgin samples strongly depend, in regard to magnitude, on the condition of the starting die. These spectral regions may be interpreted as arising from either phonon-assisted band-to-band transitions or from defect-related transitions. The same SiC die were then subjected to mechanical damage brought about by a series of closely spaced microindentations directed approximately perpendicular to the c-axis. The spectra taken after a first set and subsequently a second set of microindentations are distinct from the initial spectra in all cases, and differences are interpreted as being due to the modification of existing defects or additional defects being generated mechanically. The influence of microindentation on the ideality factor is measured and discussed. Measured light flux with respect to a standard light source is also shown at each microindentation stage.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据