4.6 Review

Diamond for Electronics: Materials, Processing and Devices

期刊

MATERIALS
卷 14, 期 22, 页码 -

出版社

MDPI
DOI: 10.3390/ma14227081

关键词

diamond; MPCVD growth; power electronics; electron microscopy

资金

  1. Ministerio de Economia y Competitividad (MINECO) of the Spanish Government [TEC2017-86347-C2-1-R, ESP2017-91820, PID2020-117201RB-C21, PID2019-110219RB-100]
  2. Junta de Andalucia (Andalusian Government, Spain) [P20_00946, FEDER-UCA18- 106470, FEDER-UCA18-107851]

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Diamond, as a wide bandgap material, shows promising characteristics in power electronic devices but faces challenges in device technology due to its high hardness and small substrate size. Despite its superior Baliga's figure of merit compared to other WBG materials, diamond is not yet widely recognized as a reference material in power electronic devices.
Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga's figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed.

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