LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives

With the aim of presenting the processes governing the Laser-Induced Periodic Surface Structures (LIPSS), its main theoretical models have been reported. More emphasis is given to those suitable for clarifying the experimental structures observed on the surface of wide bandgap semiconductors (WBS) and dielectric materials. The role played by radiation surface electromagnetic waves as well as Surface Plasmon Polaritons in determining both Low and High Spatial Frequency LIPSS is briefly discussed, together with some experimental evidence. Non-conventional techniques for LIPSS formation are concisely introduced to point out the high technical possibility of enhancing the homogeneity of surface structures as well as tuning the electronic properties driven by point defects induced in WBS. Among these, double- or multiple-fs-pulse irradiations are shown to be suitable for providing further insight into the LIPSS process together with fine control on the formed surface structures. Modifications occurring by LIPSS on surfaces of WBS and dielectrics display high potentialities for their cross-cutting technological features and wide applications in which the main surface and electronic properties can be engineered. By these assessments, the employment of such nanostructured materials in innovative devices could be envisaged.

Automated summary

This article primarily introduces the theoretical models of Laser-Induced Periodic Surface Structures (LIPSS) and their applications in the surface structures of wide bandgap semiconductors and dielectric materials. It discusses the role of radiation surface electromagnetic waves and Surface Plasmon Polaritons in LIPSS formation, along with experimental evidence. It also highlights the use of non-conventional techniques for LIPSS formation to improve surface structure homogeneity and control the electronic properties of materials. These studies are of great significance for applications in innovative devices.