期刊
MATERIALS
卷 15, 期 1, 页码 -出版社
MDPI
DOI: 10.3390/ma15010232
关键词
CuTa2-xVxO6 solid solution; phase equilibria; DTA; XRD; semiconductor
The study of CuO-V2O5-Ta2O5 oxides revealed the formation of a new substitutional solid solution in the CuV2O6-CuTa2O6 system under air atmosphere. The solid solution exhibited semiconductor properties and the overall system was divided into 12 subsidiary subsystems.
The results of the study of the three-component system of CuO-V2O5-Ta2O5 oxides showed, inter alia, that in the air atmosphere in one of its cross-sections, i.e., in the CuV2O6-CuTa2O6 system, a new substitutional solid solution with the general formula CuTa2-xVxO6 and homogeneity range for x > 0.0 and x <= 0.3 is formed. The influence of the degree of incorporation of V5+ ions into the CuTa2O6 crystal lattice in place of Ta5+ ions on the unit cell volume, thermal stability and IR spectra of the obtained solid solution was determined. Moreover, the value of the band gap energy of the CuTa2-xVxO6 solid solution was estimated in the range of 0.0 < x <= 0.3, and on this basis, the new solid solution was classified as a semiconductor. On the basis of the research results, the studied system of CuO-V2O5-Ta2O5 oxides was also divided into 12 subsidiary subsystems.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据