相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors
Zhonghao Sun et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and Vth Stability under Positive Gate Bias Stress in AlGaN/GaN MIS-HEMTs
Anthony Calzolaro et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2021)
Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration
Lung-Hsing Hsu et al.
MICROMACHINES (2021)
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
Kalparupa Mukherjee et al.
MATERIALS (2021)
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Il-Hwan Hwang et al.
CRYSTALS (2021)
Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Grown by Metal-Organic Chemical Vapor Deposition on Silicon Substrate
Lars Heuken et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2020)
Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces
Yuto Ando et al.
APPLIED PHYSICS LETTERS (2020)
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
Kalparupa Mukherjee et al.
MATERIALS (2020)
Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes
M. Whiteside et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2020)
GaN Power ICs: Reviewing Strengths, Gaps, and Future Directions
O. Trescases et al.
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2020)
Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate
Matthew Whiteside et al.
ELECTRONICS (2020)
Effects of post-deposition annealing in O2 on threshold voltage of AI2O3/AlGaN/GaN MOS heterojunction field-effect transistors
Satoshi Nakazawa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
GaN power devices: current status and future challenges
Tetsuzo Ueda
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors
Si-Qin-Gao-Wa Bao et al.
CHINESE PHYSICS B (2019)
Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
T. Partida-Manzanera et al.
JOURNAL OF APPLIED PHYSICS (2019)
Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect
R. Hentschel et al.
MICROELECTRONICS JOURNAL (2019)
Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates
Yuji Ando et al.
APPLIED PHYSICS EXPRESS (2019)
880 V/2.7 m Omega . cm(2) MIS Gate Trench CAVET on Bulk GaN Substrates
Dong Ji et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics
Son Phuong Le et al.
JOURNAL OF APPLIED PHYSICS (2018)
Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams
Akira Uedono et al.
JOURNAL OF APPLIED PHYSICS (2018)
The 2018 GaN power electronics roadmap
H. Amano et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)
Review of technology for normally-off HEMTs with p-GaN gate
Giuseppe Greco et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Tamotsu Hashizume et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
Investigation on High-kappa Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies
Baikadi Pranay Kumar Reddy et al.
SEMICONDUCTORS (2018)
Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs
Akanksha Rawat et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Effects of postmetallization annealing on interface properties of Al2O3/GaN structures
Tamotsu Hashizume et al.
APPLIED PHYSICS EXPRESS (2018)
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric
Huaxing Jiang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Influence of carbon impurities and oxygen vacancies in Al2O3 film on Al2O3/GaN MOS capacitor characteristics
Mutsunori Uenuma et al.
AIP ADVANCES (2018)
AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer
Kuiwei Geng et al.
ELECTRONICS (2018)
GaN Integration Technology, an Ideal Candidate for High-Temperature Applications: A Review
Ahmad Hassan et al.
IEEE ACCESS (2018)
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
Mengyuan Hua et al.
IEEE ELECTRON DEVICE LETTERS (2017)
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
Min Sun et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
Huaxing Jiang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric
Xing Lu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Reliability Analysis of LPCVD SiN Gate Dielectric for AlGaN/GaN MIS-HEMTs
Simon A. Jauss et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
Kenya Nishiguchi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2017)
Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth
Satoshi Nakazawa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2017)
Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
Daigo Kikuta et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2017)
Post-deposition annealing effects on the insulator/semiconductor interfaces of Al2O3/AlGaN/GaN structures on Si substrates
Toshiharu Kubo et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2017)
Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
Qian Wang et al.
RSC ADVANCES (2017)
Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density
Milan Tapajna et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)
High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability
Nadine Szabo et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)
Gate stack engineering for GaN lateral power transistors
Shu Yang et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition
Travis J. Anderson et al.
APPLIED PHYSICS EXPRESS (2016)
Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal-oxide-semiconductor structures
Ryohei Asahara et al.
APPLIED PHYSICS EXPRESS (2016)
Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics
J. W. Roberts et al.
APPLIED PHYSICS LETTERS (2016)
Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
Shota Kaneki et al.
APPLIED PHYSICS LETTERS (2016)
High-frequency AlGaN/GaN HFETs with fT/fmax of 149/263 GHz for D-band PA applications
Yuanjie Lv et al.
ELECTRONICS LETTERS (2016)
Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
Tian-Li Wu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
Ching-Hsiang Hsu et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices
Yu Sheng Chiu et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors
Son Phuong Le et al.
JOURNAL OF APPLIED PHYSICS (2016)
On the origin of interface states at oxide/III-nitride heterojunction interfaces
M. Matys et al.
JOURNAL OF APPLIED PHYSICS (2016)
GaN Technology for Power Electronic Applications: A Review
Tyler J. Flack et al.
JOURNAL OF ELECTRONIC MATERIALS (2016)
Insulated gate and surface passivation structures for GaN-based power transistors
Zenji Yatabe et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
Gaudenzio Meneghesso et al.
MICROELECTRONICS RELIABILITY (2016)
Analysis of threshold voltage instability in AlGaN/GaN MISHEMTs by forward gate voltage stress pulses
Annett Winzer et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2016)
Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
Kevin J. Chen et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2016)
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors
Jae-Gil Lee et al.
SOLID-STATE ELECTRONICS (2016)
Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs
Zhaoyang Liu et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2016)
O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
Sen Huang et al.
APPLIED PHYSICS LETTERS (2015)
In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
Xiaoye Qin et al.
APPLIED PHYSICS LETTERS (2015)
Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
Ramya Yeluri et al.
APPLIED PHYSICS LETTERS (2015)
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
Tian-Li Wu et al.
APPLIED PHYSICS LETTERS (2015)
Ultrahigh-Speed GaN High-Electron-Mobility Transistors With fT/fmax of 454/444 GHz
Yan Tang et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices
Narayanan Ramanan et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
Mengyuan Hua et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation
Xinke Liu et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2015)
Detailed analysis of oxide related charges and metal-oxide barriers in terrace etched Al2O3 and HfO2 on AlGaN/GaN heterostructure capacitors
A. Winzer et al.
JOURNAL OF APPLIED PHYSICS (2015)
A comparative study of atomic layer deposition of Al2O3 and HfO2 on AlGaN/GaN
Xiaoye Qin et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2015)
Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate
Davide Bisi et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2015)
Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs
Kevin J. Chen et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2015)
Impact of postdeposition annealing upon film properties of atomic layer deposition-grown Al2O3 on GaN
Annett Winzer et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2015)
Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack
Maiko Hatano et al.
APPLIED PHYSICS EXPRESS (2014)
Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
Tohru Oka et al.
APPLIED PHYSICS EXPRESS (2014)
Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress
P. Lagger et al.
APPLIED PHYSICS LETTERS (2014)
Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability
M. Capriotti et al.
APPLIED PHYSICS LETTERS (2014)
Recent advances on dielectrics technology for SiC and GaN power devices
F. Roccaforte et al.
APPLIED SURFACE SCIENCE (2014)
Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
Shenghou Liu et al.
IEEE ELECTRON DEVICE LETTERS (2014)
Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors
Zenji Yatabe et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2014)
Recent progress of GaN power devices for automotive applications
Tetsu Kachi
JAPANESE JOURNAL OF APPLIED PHYSICS (2014)
Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations
M. Tapajna et al.
JOURNAL OF APPLIED PHYSICS (2014)
Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
Jialing Yang et al.
JOURNAL OF APPLIED PHYSICS (2014)
Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy
Zeng Zhang et al.
JOURNAL OF ELECTRONIC MATERIALS (2014)
Challenges for energy efficient wide band gap semiconductor power devices
Fabrizio Roccaforte et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
Albert Colon et al.
SOLID-STATE ELECTRONICS (2014)
Effects of Cl-2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al2O3/AlGaN/GaN Heterostructures
Zenji Yatabe et al.
APPLIED PHYSICS EXPRESS (2013)
Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen
R. D. Long et al.
APPLIED PHYSICS LETTERS (2013)
Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method
M. Matys et al.
APPLIED PHYSICS LETTERS (2013)
Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors
M. Tapajna et al.
APPLIED PHYSICS LETTERS (2013)
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures
P. Fiorenza et al.
APPLIED PHYSICS LETTERS (2013)
Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
G. Ye et al.
APPLIED PHYSICS LETTERS (2013)
Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
Yuhao Zhang et al.
APPLIED PHYSICS LETTERS (2013)
Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
Ting-Hsiang Hung et al.
APPLIED PHYSICS LETTERS (2013)
Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology
Derek W. Johnson et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Fabrication and Characterization of Enhancement-Mode High-κ LaLuO3-AlGaN/GaN MIS-HEMTs
Shu Yang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With Al2O3 and Si3N4/Al2O3 Gate Dielectrics
Marleen Van Hove et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
Keisuke Shinohara et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors
Sen Huang et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
Sungsik Kim et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Reliability Evaluation of Al2O3 Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN
Daigo Kikuta et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
High Quality SiO2/Al2O3 Gate Stack for GaN Metal-Oxide-Semiconductor Field-Effect Transistor
Hiroshi Kambayashi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors
Y. Hori et al.
JOURNAL OF APPLIED PHYSICS (2013)
Electronic surface and dielectric interface states on GaN and AlGaN
Brianna S. Eller et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2013)
Impact of native defects in high-k dielectric oxides on GaN/oxide metal-oxide-semiconductor devices
Minseok Choi et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2013)
Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements
Gaudenzio Meneghesso et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2013)
Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs
Yunyou Lu et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 (2013)
Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
M. J. Anand et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 (2013)
Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement
M. Matys et al.
APPLIED PHYSICS LETTERS (2012)
Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures
Patrick Fiorenza et al.
APPLIED PHYSICS LETTERS (2012)
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures
Fabrizio Roccaforte et al.
APPLIED PHYSICS LETTERS (2012)
Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping
Hong-An Shih et al.
APPLIED PHYSICS LETTERS (2012)
Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices
Xinwei Wang et al.
APPLIED PHYSICS LETTERS (2012)
Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor
S. Toyoda et al.
APPLIED PHYSICS LETTERS (2012)
Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures
Junwoo Son et al.
APPLIED PHYSICS LETTERS (2012)
Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
Sen Huang et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs
Dong Seup Lee et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride
Jialing Yang et al.
JOURNAL OF APPLIED PHYSICS (2012)
Interface state characterization of ALD-Al2O3/GaN and ALD-Al2O3/AlGaN/GaN structures
Yujin Hori et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 6 (2012)
Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al2O3/AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor on Si
Hong Zhou et al.
APPLIED PHYSICS EXPRESS (2011)
Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique
Joseph J. Freedsman et al.
APPLIED PHYSICS LETTERS (2011)
Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor
Z. H. Liu et al.
APPLIED PHYSICS LETTERS (2011)
Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors
D. A. Deen et al.
APPLIED PHYSICS LETTERS (2011)
Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx
V. V. Afanas'ev et al.
APPLIED PHYSICS LETTERS (2011)
Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
Michele Esposto et al.
APPLIED PHYSICS LETTERS (2011)
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic ON-Resistance
Rongming Chu et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Capacitance-Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
Chihoko Mizue et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2011)
Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress
Masafumi Tajima et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2011)
Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
J. R. Weber et al.
JOURNAL OF APPLIED PHYSICS (2011)
AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation
David Deen et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 (2011)
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
Byungha Shin et al.
APPLIED PHYSICS LETTERS (2010)
Oxygen vacancy levels and electron transport in Al2O3
D. Liu et al.
APPLIED PHYSICS LETTERS (2010)
High-Permittivity Dielectric Stack on Gallium Nitride Formed by Silane Surface Passivation and Metal-Organic Chemical Vapor Deposition
Xinke Liu et al.
IEEE ELECTRON DEVICE LETTERS (2010)
AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading
Naohiro Tsurumi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition
Yujin Hori et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2010)
Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition
D. Gregusova et al.
JOURNAL OF APPLIED PHYSICS (2010)
Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage
Hiroshi Kambayashi et al.
SOLID-STATE ELECTRONICS (2010)
High performance AlGaN/GaN power switch with HfO2 insulation
Junxia Shi et al.
APPLIED PHYSICS LETTERS (2009)
GaN transistor characteristics at elevated temperatures
A. Perez-Tomas et al.
JOURNAL OF APPLIED PHYSICS (2009)
GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling
A. Perez-Tomas et al.
JOURNAL OF APPLIED PHYSICS (2009)
High performance and high reliability AlGaN/GaN HEMTs
Toshihide Kikkawa et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2009)
Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis
R. Stoklas et al.
APPLIED PHYSICS LETTERS (2008)
Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer
Srabanti Chowdhury et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Temperature-dependent interface-state response in an Al2O3/n-GaN structure
Kimihito Ooyama et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors
Marcin Miczek et al.
JOURNAL OF APPLIED PHYSICS (2008)
Crystalline SiNx ultrathin films grown on AlGaN/GaN using In situ metalorganic chemical vapor deposition
Toshiyuki Takizawa et al.
JOURNAL OF ELECTRONIC MATERIALS (2008)
Chemical and potential bending characteristics of SiNx/AlGaN interfaces prepared by in situ metal-organic chemical vapor deposition
Eri Ogawa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2007)
Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide
Chang Liu et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2007)
Studies of interface states in Sc2O3/GaN, MgO/GaN, and MgScO/GaN structures
A. Y. Polyakov et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2007)
Present status and future prospect of widegap semiconductor high-power devices
Hajime Okumura
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2006)
Band offsets of high K gate oxides on III-V semiconductors
J. Robertson et al.
JOURNAL OF APPLIED PHYSICS (2006)
Investigations of HfO2/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
C Liu et al.
APPLIED PHYSICS LETTERS (2006)
Theoretical study on dielectric response of amorphous alumina
H Momida et al.
PHYSICAL REVIEW B (2006)
Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer -: art. no. 054501
J Derluyn et al.
JOURNAL OF APPLIED PHYSICS (2005)
High drain current density and reduced gate leakage current in channel-doped AlGaN/GaN heterostructure field-effect transistors with Al2O3/Si3N4 gate insulator -: art. no. 073504
N Maeda et al.
APPLIED PHYSICS LETTERS (2005)
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Y Cai et al.
IEEE ELECTRON DEVICE LETTERS (2005)
Fabrication of AlGaN/GaN-double-insulator metal-oxide-semiconductor high-electron-mobility transistors using SO2 and SiN as gate insulators
K Balachander et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2005)
Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN
PJ Hansen et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2005)
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric -: art. no. 063501
PD Ye et al.
APPLIED PHYSICS LETTERS (2005)
Leakage mechanism in GaN and AlGaN schottky interfaces
T Hashizume et al.
APPLIED PHYSICS LETTERS (2004)
Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
T Hashizume et al.
APPLIED PHYSICS LETTERS (2003)
Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
T Hashizume et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation
R Mehandru et al.
APPLIED PHYSICS LETTERS (2003)
AlGaN/GaN heterostructure metal-insulator-semiconductor high-electron-mobility transistors with Si3N4 gate insulator
M Ochiai et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS (2003)
Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition
ZQ Fang et al.
APPLIED PHYSICS LETTERS (2003)
Polarized neutron scattering from ordered magnetic domains on a mesoscopic permalloy antidot array
DR Lee et al.
APPLIED PHYSICS LETTERS (2003)
Improvement in Al2O3 dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique
JB Kim et al.
JOURNAL OF APPLIED PHYSICS (2002)
Impact of annealing-induced compaction on electronic properties of atomic-layer-deposited Al2O3
VV Afanas'ev et al.
APPLIED PHYSICS LETTERS (2002)
Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3
B Luo et al.
SOLID-STATE ELECTRONICS (2002)
Band gap of amorphous and well-ordered Al2O3 on Ni3Al(100)
I Costina et al.
APPLIED PHYSICS LETTERS (2001)
The impact of surface states on the DC and RF characteristics of A1GaN/GaN HFETs
R Vetury et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)
Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
T Hashizume et al.
JOURNAL OF APPLIED PHYSICS (2000)
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
BM Green et al.
IEEE ELECTRON DEVICE LETTERS (2000)
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
MA Khan et al.
IEEE ELECTRON DEVICE LETTERS (2000)
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher et al.
JOURNAL OF APPLIED PHYSICS (2000)
分享论文
