Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

SiGe-based thermoelectric (TE) materials are well-known for high-temperature utilization, but rarely relevant in the low temperature region. Here a Ge quantum dots (QDs) and Sn precipitation SiGeSn hybrid film are constructed via ultrafast high temperature annealing (UHA) of a treated P-ion implantation SiGeSn film on Si/SiO2 substrate. Combining the modulation doping effect dominated by Sn precipitates and the energy filtering effect caused by Ge QDs, the optimized SiGe films achieve a giant power factor as high as 91 mu W cm(-1) K-2 @300 K, room temperature, while maintaining low thermal conductivity. This strategy on film construction provides a novel insight for TE materials with striking performance.

Automated summary

SiGe-based thermoelectric materials are traditionally known for high-temperature applications, but this study demonstrates the successful construction of Ge quantum dots and Sn precipitation SiGeSn hybrid films via ultrafast high temperature annealing. By combining modulation doping dominated by Sn precipitates and energy filtering caused by Ge QDs, the optimized SiGe films achieve a giant power factor of 91 mu W cm(-1) K-2 @300 K at room temperature, while maintaining low thermal conductivity. This novel film construction strategy offers insight for TE materials with impressive performance.