期刊
NATURE COMMUNICATIONS
卷 12, 期 1, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/s41467-021-27565-1
关键词
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资金
- Ministry of Education, Culture, and Science (Gravity program ) [024.001.035]
- Netherlands Organisation for Scientific Research (NWO Spinoza grant)
By increasing the interfacial energy offset between the electron-blocking layer and the perovskite, the study demonstrates a photodiode with extremely low dark and noise currents, as well as high near-infrared sensitivity.
Metal halide perovskite photodiodes (PPDs) offer high responsivity and broad spectral sensitivity, making them attractive for low-cost visible and near-infrared sensing. A significant challenge in achieving high detectivity in PPDs is lowering the dark current density (J(D)) and noise current (i(n)). This is commonly accomplished using charge-blocking layers to reduce charge injection. By analyzing the temperature dependence of J(D) for lead-tin based PPDs with different bandgaps and electron-blocking layers (EBL), we demonstrate that while EBLs eliminate electron injection, they facilitate undesired thermal charge generation at the EBL-perovskite interface. The interfacial energy offset between the EBL and the perovskite determines the magnitude and activation energy of J(D). By increasing this offset we realized a PPD with ultralow J(D) and i(n) of 5 x 10(-8) mA cm(-2) and 2 x 10(-14) A Hz(-1/2), respectively, and wavelength sensitivity up to 1050 nm, establishing a new design principle to maximize detectivity in perovskite photodiodes. In lead-tin halide perovskite photodiodes, the interfacial energy offset at the charge transport layer controls the dark current. In this work, by increasing this offset, the authors demonstrates a photodiode with ultralow dark and noise currents and high near-infrared sensitivity.
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