Epitaxial growth of β-Ga2O3 nanowires from horizontal to obliquely upward evolution

Changing the direction of horizontal nanowires to extend them in the z direction and grow obliquely has important practical significance for achieving higher density integration and making it have more free space in multi-dimension. However, how to guide the horizontal nanowires to extend in the z direction and grow obliquely is still a challenge. In this paper, we report the regular and horizontal beta-Ga2O3 nanostructure grown on c-plane Al2O3 substrates, and the evolution of beta-Ga2O3 nanowires from horizontal growth to obliquely upward growth through the chemical vapor deposition (CVD) method. Field-emission scanning electron microscopy, field-emission transmission electron microscopy, X-ray diffraction, Raman spectrum and photoluminescence spectroscopy were used to investigate the morphology, structure, components, and optical properties of the assynthesized beta-Ga2O3 nanowires. Due to the change of the growth interface at the Au catalysts, there are four different growth modes for the growth of beta-Ga2O3 nanowires. The preparation route reported in this study is more simple, general and low-cost compared to other common growth methods for Ga2O3 nanomaterials, and these studies about the evolution of nanowires growth can provide a reference for the change of growth direction of nanowires and simplify planar device processing technology.

Automated summary

This study reports the growth of horizontal beta-Ga2O3 nanostructures and the evolution of nanowires from horizontal to obliquely upward growth through CVD method. Various techniques were used to analyze the morphology, structure, and optical properties of the nanowires, revealing four different growth modes. The preparation route presented in this study is simpler, more general, and cost-effective compared to other common methods, providing insights into the growth direction changes of nanowires and simplifying planar device processing technology.