High mobility silicon indium oxide thin-film transistor fabrication by sputtering process

Amorphous silicon indium oxide (a-ISO) thin-films were deposited by sputtering process at room temperature for thin-film transistor (TFT) active channel applications. The amorphous nature of the deposited ISO thin films was confirmed by structural analysis and the films had an average surface roughness of ~0.11 nm. The oxygen partial pressure was varied from 0 to 20% to deposit ISO active channel layers which showed a transition from conducting to semiconducting behaviour. The a-ISO TFT deposited with 5% oxygen partial pressure and post annealed at 100 C exhibits a saturation mobility of 31.7 cm2/V.s, on-off current ratio of 2.3 x 1010, turn-on voltage of-5 V and sub-threshold swing of 0.25 V/dec. Bias stress analysis further confirms the stable operation of the ISO TFT devices. Silicon dopant acts as a strong carrier suppressor and enhances performance of a-ISO TFT devices.

Automated summary

In this study, amorphous silicon indium oxide thin films were deposited using a sputtering process at room temperature for thin-film transistor (TFT) active channel applications. The study confirmed the amorphous nature and surface roughness of the deposited films and investigated the effect of different oxygen partial pressures on film properties. The results showed that the annealed films exhibited good performance and stability.