Characteristic of flexible β-Ga2O3 Schottky barrier diode based on mechanical stripping process

The flexible transverse beta-Ga2O3 Schottky barrier diode (SBD) was fabricated by transferring the stripped beta-Ga2O3 single crystal film onto muscovite, and its electrical characteristic under flat and bending conditions were tested. It is found that the forward current of the device after bending increases in the small voltage range of 0-1 V and decreases in the large voltage range of 1-4.5 V as the curvature increases. This result is attributed to the two mechanisms that the barrier height decreases and the scattering increases with the increase of the curvature. The decrease in barrier height makes it easier for electrons to migrate from the cathode to the anode in small voltage range, while the current decreases in large voltage range due to scattering. It is further found that the maximum transconductance (gm) and subthreshold swing (SS) deteriorate with the increase of curvature and the corresponding voltage value of gm drifts to the right. In addition, the switch ratio of the device under flat conditions is 108, whereas in bending tests the switch ratio is 107 which is only reduced by one order of magnitude and it is essentially the same as the current level under flat conditions.

Automated summary

The research on the flexible transverse beta-Ga2O3 Schottky barrier diode demonstrated that the device's electrical characteristics change with increasing curvature, attributed to the decrease in barrier height and increase in scattering. The forward current of the device shows different trends in small and large voltage ranges after bending, while the maximum transconductance and subthreshold swing are also affected by the increase in curvature. The switch ratio of the device remains relatively stable under bending conditions compared to flat conditions.