Effect of laser energy on the properties of neodymium-doped indium zinc oxide thin films deposited by pulsed laser deposition

The neodymium (Nd) doped indium-zinc-oxide (NIZO) is a material with high mobility and great potential in transparent electronic devices. NIZO thin films were prepared by pulsed laser deposition (PLD) at 250, 350, 450, and 550 mJ/pulse laser energy, respectively. With the increase of laser energy, the films gradually change from an amorphous to an amorphous/crystalline state and the In2O3 crystals have preferential growth in the (123) plane. The average transmittance of the film is higher than 80% in the visible range. When the laser energy is 250 mJ, the carrier mobility has the highest value of 14.43 cm(2) V-1 s(-1), and it decreases with the increase of laser energy. The possible reason for this phenomenon is given by electronic structure and crystallization. Based on the content of defect states and the emitted particle number, the carrier concentration of the films is analyzed.

Automated summary

Neodymium (Nd) doped indium-zinc-oxide (NIZO) is a material with high mobility and great potential in transparent electronic devices. NIZO thin films were prepared by pulsed laser deposition (PLD) method at different laser energies, leading to a transition from amorphous to amorphous/crystalline state in the films. The carrier mobility reaches the highest value at 250 mJ, but decreases with higher laser energy inputs.