The band structure calculation of tensile strained GaNAsBi/GaAs quantum well heterostructure

The optical properties of interband and intersubband transitions in the GaNAsBi/GaAs quantum well (QW) heterostructure have been systematically studied by solving the Schro???dinger equation. Theoretical optimization of physical parameters of the GaNAsBi tensile strained layer has pointed out the importance of the polarization mode in the change of the optical absorption magnitude. Indeed, the N and Bi compositions and the quantum well width variations are thoroughly dis-cussed. For specific well parameters, the intersubband absorption spectrum of QW operating at 9:5 ??m as well as its magnitude dependence on the applied electric field and doping concentration are simulated. Based on the calculated absorption spectra, we can expect that the photodetection spectra of the future designed system can be tuned by controlling these relevant parameters.

Automated summary

The study systematically explored the optical properties of interband and intersubband transitions in GaNAsBi/GaAs quantum well heterostructure. The importance of the polarization mode in changing optical absorption magnitude was highlighted through theoretical optimization of physical parameters, indicating the potential for tuning photodetection spectra in future designed systems by controlling relevant parameters.