相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Vertical GaN Schottky barrier diodes with area-selectively deposited p-NiO guard ring termination structure
Jiyu Zhou et al.
SUPERLATTICES AND MICROSTRUCTURES (2021)
Mg-implanted bevel edge termination structure for GaN power device applications
Maciej Matys et al.
APPLIED PHYSICS LETTERS (2021)
Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes
Ying Wang et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)
Recessed-anode AlGaN/GaN diode with a high Baliga's FOM by combining a p-GaN cap layer and an anode-connected p-GaN buried layer
Tingting Wang et al.
SUPERLATTICES AND MICROSTRUCTURES (2021)
Review of Recent Progress on Vertical GaN-Based PN Diodes
Taofei Pu et al.
NANOSCALE RESEARCH LETTERS (2021)
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
Ming Xiao et al.
APPLIED PHYSICS LETTERS (2020)
Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage
Zhuangzhuang Hu et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Quasi-vertical GaN heterojunction diodes with p-NiO anodes deposited by sputtering and post-annealing
Yuan Ren et al.
VACUUM (2020)
Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area
M. Antoniou et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Recent development of vertical GaN power devices
Tohru Oka
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination
Takuya Maeda et al.
IEEE ELECTRON DEVICE LETTERS (2019)
High-Voltage and High-ION/IOFF Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination
Shaowen Han et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Materials and processing issues in vertical GaN power electronics
Jie Hu et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials
Xinke Liu et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Yuhao Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Wide-bandgap semiconductor materials: For their full bloom
Shizuo Fujita
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates
Kazuhiro Mochizuki et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)