4.5 Article

Superconducting NbN thin films on various (X/Y/Z-cut) lithium niobate substrates

期刊

出版社

IOP Publishing Ltd
DOI: 10.1088/1361-6668/ac459e

关键词

NbN thin films; SNSPD; lithium niobate substrates

资金

  1. National Key R&D Program of China [2017YFA0304000]
  2. National Natural Science Foundation of China [61971408, 61827823]
  3. Shanghai Municipal Science and Technology Major Project [2019SHZDZX01]
  4. Shanghai Rising-Star Program [20QA1410900]
  5. Youth Innovation Promotion Association of Chinese Academy of Sciences [2020241, 2021230]
  6. Superconducting Electronics Facility (SELF) of SIMIT

向作者/读者索取更多资源

By depositing NbN superconducting films on different types of LN substrates, it was found that different LN substrates have different thickness dependencies on NbN films' T(c), delta T(c), and residual resistance ratios. By evaluating the cutting selection, it was concluded that X-cut and Y-cut LN are more suitable as a platform for integrated LN photonic chips.
Lithium niobate (LN) exhibits outstanding properties in various application of photonics, electronics, and optoelectronics, showing potentials in integration. Due to the directional dependence of LN tensor properties, optical elements made up by LN favor the type of LN substrate. To introduce high-performance superconducting nanowire single-photon detectors (SNSPDs) to LN-integrated photonics chips, superconducting NbN thin films with thicknesses from 3 to 50 nm were deposited on X-cut, Y-cut, and Z-cut LN substrates using magnetron sputtering at room temperature. The different thickness dependencies of T (c), delta T (c), and residual resistance ratios are observed in NbN thin films on different LN substrates. NbN thin films on X-cut and Y-cut LN substrates are polycrystalline with a transition temperature (T (c)) of similar to 6 K for a 6 nm thick film. While NbN thin films are epitaxially textured on Z-cut LN substrates with T (c) of 11.5 K for a 6 nm thick film. NbN-SNSPD on X-cut LN substrates shows a weak saturation trend of its system detection efficiency; however, the performance of NbN-SNSPD on Z-cut LN substrates is limited. We evaluated the selection of cuts and concluded that X-cut and Y-cut LN are more suitable to be a platform of integrated LN photonic chips from the aspect of NbN-SNSPD. This study helps fabricate high-performance SNSPDs on fully integrated photonics chips on LN substrates.

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