On the interpretation of MOS impedance data in both series and parallel circuit topologies

We investigate the interplay between the series (S) and parallel (P) equivalent circuit representations of the MOS system conductance (G) and capacitance (C) in inversion. Experimental and simulated data for Si and InGaAs MOSCAPs are firstly analyzed mathematically. It is found that by interpreting the measured data in both the series and parallel mode, five independent values are obtained for the magnitude and frequency of the maxima and minima points of the -omega dC(S,P)/d omega and G(S,P)/omega functions versus angular frequency (omega). The significance and application of the approach is presented and discussed.

Automated summary

The study investigates the interaction between the series and parallel equivalent circuit representations of the MOS system conductance and capacitance, finding five independent values for magnitude and frequency of maxima and minima points. By interpreting the measured data in both series and parallel modes, the significance and application of this approach is presented and discussed.