期刊
SOLID-STATE ELECTRONICS
卷 186, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2021.108036
关键词
Reconfigurable FET; RFET; Schottky barrier FET; SBFET; Polarity control; Electrostatic doping; CMOS
资金
- Saxon State Parliament
- German Research Foundation (DFG) [WE 4853/1-3, MI-1247/19-1]
- cluster of excellence 'Center for Advancing Electronics Dresden' (CfAED) at TU Dresden
The reconfigurable field-effect transistor (RFET) is an electronic device that can reversibly reconfigure its conduction mechanism between n-type and p-type operation modes, relying on electrostatic doping instead of chemical doping. The focus of research has shifted towards the circuit level, bringing the unique device characteristics to fruition.
The reconfigurable field-effect transistor (RFET), is an electronic device whose conduction mechanism can be reversibly reconfigured between n-type and p-type operation modes. To enable this functionality, those devices do not rely on chemical doping caused by impurities but rather on electrostatic doping, i.e. the generation of mobile carriers via an external potential. This functionality has been first concieved in the early 2000s to reduce the source-drain leakage in ambipolar thin film transistors. Over the years many different concepts have been developed employing different conduction mechanisms as well as channel materials, such as silicon nanowires, carbon nanotubes or two-dimensional layered materials. In addition the focus the research shifted more and more towards the circuit level, bringing the unique device characteristics to fruitation. In this work, we will give an historic overview of the main development phases including thier key-achievements starting from the earlier years reaching untill today. Further, we discuss the most interesting circuit properties arising from the device functionality and summarize the broad range of their potential future applications.
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