期刊
SOLID-STATE ELECTRONICS
卷 184, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2021.108053
关键词
Multi-dielectric diode; Native oxide; Tunnelling; Tsu-Esaki model; Transfer matrix method; WKB approximation; Ultra-high speed rectification; Rectenna
资金
- EPSRC UK [EP/K018930/1]
- EPSRC [EP/K018930/1] Funding Source: UKRI
The study investigates multi-stack metal-insulator-metal (MIM) diodes with ultra-thin Ta2O5/Al2O3 dielectrics through experiment and modeling. Tunnelling transport is modeled using transfer matrix (TMM) and Wentzel-Kramers-Brillouin (WKB) methods. Rectification for a triple dielectric layer device is shown to occur at a turn-on voltage as low as 170 mV with a non-linearity of 3 and an asymmetry increasing from 2.2 at the turn-on voltage to over two orders of magnitude at 1 V.
Multi-stack metal-insulator-metal (MIM) diodes of ultra-thin Ta2O5/Al2O3 dielectrics are investigated by experiment and modelling. Tunnelling transport is modelled using transfer matrix (TMM) and Wentzel-KramersBrillouin (WKB) methods. Rectification for a triple dielectric layer device is shown to occur at a turn-on voltage (VON) as low as 170 mV with a non-linearity of 3 and an asymmetry increasing from 2.2 at the VON to over two orders of magnitude at 1 V.
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