期刊
SOLID-STATE ELECTRONICS
卷 185, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2021.108101
关键词
GST; Ge-rich GST; Thermal annealing; Phase change materials
资金
- European Union [783176, H2020/2014-2020]
- TUBITAK-ARDEB [117E765]
- ECSEL Joint Undertaking project WAKeMeUP
The structural properties of Germanium-Antimony-Tellurium (GST) and Ge-rich GST thin film samples were investigated in this work. The films were studied after annealing at various temperatures, and analysis techniques such as X-Ray Diffraction, FTIR, Raman Spectroscopy, and SEM equipped with EDS were used to study the evolution of the structure in the samples.
In this work, we have investigated the structural properties of Germanium (Ge)-Antimony (Sb)-Tellurium (Te) (GST) and Ge-rich GST thin film samples. The structural properties of the films are studied after annealing temperatures from room temperature to 450 degrees C. We performed the annealing procedure using a heat rate of 10 degrees C/min to achieve the target temperature for a duration of 10 min under N2 flow. After heat treatment, we carried out X-Ray Diffraction (XRD), Fourier Infra-Red Spectroscopy (FTIR), Raman Spectroscopy and Scanning Electron Microscopy (SEM) equipped with Energy-dispersive X-ray spectroscopy (EDS) to investigate the evolution of the structure in the samples.
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