相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Passivated emitter and rear cell-Devices, technology, and modeling
Ralf Preu et al.
APPLIED PHYSICS REVIEWS (2020)
Accounting for the Dependence of Coil Sensitivity on Sample Thickness and Lift-Off in Inductively Coupled Photoconductance Measurements
Lachlan E. Black et al.
IEEE JOURNAL OF PHOTOVOLTAICS (2019)
Precise parameterization of the recombination velocity at passivated phosphorus doped surfaces
Achim Kimmerle et al.
JOURNAL OF APPLIED PHYSICS (2016)
Carrier-diffusion corrected J0-analysis of charge carrier lifetime measurements for increased consistency
Achim Kimmerle et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2015)
Improved quantitative description of Auger recombination in crystalline silicon
Armin Richter et al.
PHYSICAL REVIEW B (2012)
Silicon Surface Passivation by Thin Thermal Oxide/PECVD Layer Stack Systems
Sebastian Mack et al.
IEEE JOURNAL OF PHOTOVOLTAICS (2011)
Numerical modeling of highly doped Si:P emitters based on Fermi-Dirac statistics and self-consistent material parameters
PP Altermatt et al.
JOURNAL OF APPLIED PHYSICS (2002)
Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide
MJ Kerr et al.
JOURNAL OF APPLIED PHYSICS (2001)