Radiation tolerance of GaAs1-xSbx solar cells

High radiation tolerance of GaAs1-xSbx based solar cells is demonstrated for the low-intensity-low-temperature (LILT) conditions of the target planets Saturn, Jupiter, and Mars. The GaAs1-xSbx-based cells are irradiated with high energy electrons to assess the effect of harsh radiation environment on the solar cell and the response of the cell is then investigated in terms of its photovoltaic operation. This system shows significant radiation resistance to the high energy electron environment for the conditions of the planets of interest. An unusual increase of the short circuit current after irradiation is observed at low temperature, which is supported by a simultaneous increase in the external quantum efficiency of the cell under the same conditions. The open circuit voltage and fill factor of the cell are especially tolerant to irradiation, which is also reflected in unchanged dark current-voltage characteristics of the solar cell upon irradiation particularly at LILT.

Automated summary

The high radiation tolerance of GaAs1-xSbx based solar cells for the low-intensity-low-temperature conditions of Saturn, Jupiter, and Mars is demonstrated. The cells exhibit significant resistance to high energy electron environment on these target planets, with an unusual increase in short circuit current at low temperature. The open circuit voltage and fill factor of the cells are especially tolerant to irradiation, reflected in unchanged dark current-voltage characteristics particularly at LILT.