4.8 Article

Controllable 3D Porous Ni Current Collector Coupled with Surface Phosphorization Enhances Na Storage of Ni3S2 Nanosheet Arrays

期刊

SMALL
卷 18, 期 8, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202106161

关键词

3D porous Ni; current collectors; Na-ion batteries; Ni; S-3; (2) nanosheet arrays; phosphorization

资金

  1. National Natural Science Foundation of China [22179011]
  2. International Scientific and Technological Cooperation Projects of Shaanxi Province of China [2020KW-024]

向作者/读者索取更多资源

3D porous Ni is fabricated using an electroless plating method, with controllable pore size achieved through adjusting Ni2+ depositing rate and hydrogen bubbles releasing rate. The Ni3S2 nanosheet arrays anode is grown on the unique 3D porous Ni current collector, followed by surface phosphorization to enhance electronic conductivity.
3D porous Ni is fabricated via an easily scalable electroless plating method using a dynamic template formed through in-situ hydrogen bubbles. The pore size in the range of several micrometers is controllable through adjusting the Ni2+ depositing rate and hydrogen bubbles releasing rate. The Ni3S2 nanosheet arrays anode is then grown on the unique 3D porous Ni current collector followed by subsequent surface phosphorization. The tremendous interconnected pores and rich voids between the Ni3S2 nanosheet arrays cannot only provide rapid transferring channels for Na+, but also accommodate volumetric changes of the Ni3S2 electrode during cycling, guaranteeing the integrity of the active material. In addition, the surface phosphorized layer enhances the electronic conductivity through providing an electron transport highway along the 3D Ni3S2, NiP2 layer, and 3D porous Ni current collector, and simultaneously stabilizes the electrode/electrolyte interphase as a protecting layer. Because of these merits, the phosphorized 3D porous Ni3S2 (3D P-Ni3S2) electrode is capable of delivering an ultra-stable capacity of 387.5 mAh g(-1) at 0.1 A g(-1), and a high capacity retention of 85.3% even at a high current density of 1.6 A g(-1).

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