4.8 Article

Commensurate Assembly of C60 on Black Phosphorus for Mixed-Dimensional van der Waals Transistors

期刊

SMALL
卷 18, 期 10, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202105916

关键词

black phosphorus; C; (60) fullerenes; mixed-dimensional; molecule epitaxy; van der Waals heterostructures; vertical transistors

资金

  1. Basic Science Research Program at the National Research Foundation of Korea [NRF-2017R1A5A1014862, NRF-2019R1C1C1003643]
  2. Yonsei Signature Research Cluster Program of 2021 [2021-22-0004]
  3. Basic Science Research Program at the National Research Foundation of Korea - Ministry of Education [NRF-2020R1A6A3A13060549]
  4. Ministry of Science and ICT [NRF-2021R1C1C2006785]
  5. Institute for Basic Science [IBS-R026-D1]
  6. Ministry of Science & ICT (MSIT), Republic of Korea [IBS-R026-D1-2022-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

The research demonstrates that black phosphorus templates can induce highly oriented assembly of C-60 molecular crystals, and lithography-free fabricated C-60/BP electronic devices exhibit ideal electrical properties. The corresponding vertical vdW transistors show high photoresponsivity and fast response time under visible light illumination.
2D crystals can serve as templates for the realization of new van der Waals (vdW) heterostructures via controlled assembly of low-dimensional functional components. Among available 2D crystals, black phosphorus (BP) is unique due to its puckered atomic surface topography, which may lead to strong epitaxial phenomena through guided vdW assembly. Here, it is demonstrated that a BP template can induce highly oriented assembly of C-60 molecular crystals. Transmission electron microscopy and theoretical analysis of the C-60/BP vdW heterostructure clearly confirm that the BP template results in oriented C-60 assembly with higher-order commensurism. Lateral and vertical devices with C-60/BP junctions are fabricated via a lithography-free clean process, which allows one to investigate the ideal electrical properties of pristine C-60/BP junctions. Effective tuning of the C-60/BP junction barrier from 0.2 to 0.5 eV and maximum on-current density higher than 10(4) mA cm(-2) are achieved with graphite/C-60/BP vertical vdW transistors. Due to the formation of high-quality C-60 film and the semitransparent graphite top-electrode, the vertical transistors show high photoresponsivities up to approximate to 100 A W-1 as well as a fast response time under visible light illumination.

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