期刊
SMALL
卷 18, 期 10, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202105306
关键词
nanophotonic devices; photolithography; planar asymmetric heterojunctions; polymer nanofibers; self-alignment technique
类别
资金
- National Natural Science Foundation [62174083]
- NSF of Jiangsu Province [BK20180338]
- Fundamental Research Funds for the Central Universities in China [0205/14380222, 0205/14380159]
Polymeric semiconductors are important for next-generation electronic devices, and researchers have developed versatile P3HT nanofibers and achieved high-resolution lateral heterojunctions. By constructing planar photovoltaic devices, the impact of channel length on photovoltaic efficiency has been observed.
Polymeric semiconductors are crucial candidates for the construction of next-generation flexible and printable electronic devices. By virtue of the successful preparation of monodispersed colloidal solution in orthogonal solvent, poly(3-hexylthiophene) (P3HT) nanofibers are developed into versatile building blocks for nanoelectronics and their compatibilities are verified with photolithographic lift-off technology. Then, the joint efforts from both the bottom-up hierarchical self-assembly and top-down self-alignment technology have led to the realization of lateral asymmetric heterojunctions with resolution better than 1 mu m. As a result, planar photovoltaic devices incorporating N,NMODIFIER LETTER PRIME-dioctyl-3,4,9,10-perylenedicarboximide and P3HT supramolecular nanowires as active components are constructed with the cathode-to-anode distance being tuned from approximate to 0.1 to 1-2 mu m. Based on such a novel device configuration, an interesting phenomenon of channel-length-dependent photovoltaic efficiency is observed for the first time, strongly suggesting the impact of near-field light intensity on the performance of nanophotonic devices.
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