期刊
SMALL
卷 18, 期 9, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202106341
关键词
field effect transistors; nonlayered materials; quantum confinement effect; second harmonic generation; ultrathin Ge(110) single crystals
类别
资金
- National Natural Science Foundation of China [21905210, 22025303]
- Sino-German Center for Research Promotion [1400]
Ultrathin Ge(110) single crystals with semiconductive properties were successfully synthesized via gallium-associated self-limiting growth, exhibiting excellent characteristics for potential applications in electronics and optoelectronics.
Germanium, the prime applied semiconductor, is widely used in solid-state electronics and photoelectronics. Unfortunately, since the 3D diamond-like structure with strong covalent bonds impedes the 2D anisotropic growth, only the examples of ultrathin Ge along the (111) plane have been investigated, much less to the controllable synthesis along another crystal surface. Meanwhile, Ge(111) flakes are limited in semiconductor applications because of their gapless property. Here, ultrathin Ge(110) single crystal is synthesized with semiconductive property via gallium-associated self-limiting growth. The obtained ultrathin Ge(110) single crystal exhibits anisotropic honeycomb structure, uniformly incremental lattice, wide tunable direct-bandgap, blue-shifted photoluminescence emission, and unique phonon modes, which are consistent with the previous theoretical predictions. It also confirms excellent second harmonic generation and high hole mobility of 724 cm(2) V-1 s(-1). The realization of ultrathin Ge(110) single crystal will provide an excellent candidate for application in electronics and optoelectronics.
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