期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 344, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2021.130111
关键词
Oxygen vacancy; Doping; SnO2; Gas sensor; Electrostatic spinning
资金
- National Natural Science Founda-tions of China [11864034, 11964035]
- Scientific Research Project of Gansu Province [18JR3RA089, 17JR5RA072]
In this study, terbium-doped SnO2 nanotubes were synthesized and characterized for gas sensing applications. XPS analysis revealed that 7% terbium-doped SnO2 showed the best sensitivity to ethanol at 100 ppm, reaching 53.6 at 200 degrees Celsius. The doping of terbium increased the number of active sites on the surface of SnO2, enhancing gas sensitivity and electrical responsiveness.
In this work, different concentrations of terbium (Tb) doped SnO2 nanotubes (NTs) were synthesized via simple uniaxial electros-pinning and high-temperature calcination. The mapping results show that Tb elements are uniformly distributed on SnO2 NTs. X-ray photoelectron spectroscopy (XPS) was used to characterize the changes of oxygen ion species of pristine SnO2 and 7 mol% Tb-doped SnO2. In terms of gas sensitive performance, the sensor prepared by this method has low operating temperature, excellent selectivity and ultra-high sensitivity. Notably, compared with other obtained SnO2 samples, the 7 mol% NTs presented the best sensing performance, and the response to 100 ppm ethanol reached 53.6 at 200 degrees C. Combined with the study of gas sensitivity, it can be confirmed that doping Tb increases the number of active sites (such as oxygen vacancies (VO)) on the surface of SnO2, thus enhancing the gas sensitivity and electrical responsiveness of SnO2. Hence, the research in this work will be helpful to the development of new high performance gas sensors based on dopant metal oxide semiconductor.
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