Energy level regulation to optimize hydrogen sensing performance of porous bimetallic gallium-indium oxide with ultrathin pore walls

Although hydrogen sensors with high-response have been extensively studied and developed, it is still a great challenge to achieve ultra-fast response and recovery, high sensitivity and excellent selectivity towards hydrogen (H-2) for a gas sensor. Herein, porous Ga-In bimetallic oxide with atomically thin pore wall was synthesized by electrospinning and followed calcination. The sensor based on this sensing material (Ga1.2In0.8O3) showed ultrashort response and recovery time (approximate to 1 s and 3 s), high response (R-a/R-g approximate to 15-500 ppm H-2), good reproducibility, remarkable stability, low detection limit (2 ppm) and excellent selectivity (without cross-response to carbon monoxide). The enhanced hydrogen gas sensing performance of this material can be attributed to its novel atomically thin wall, optimal Fermi level and abundant chemisorbed oxygen.

Automated summary

In this study, porous Ga-In bimetallic oxide with atomically thin pore wall was synthesized by electrospinning and calcination, and a sensor based on this material exhibited ultrashort response and recovery time, high sensitivity and selectivity towards hydrogen. The enhanced performance of this material can be attributed to its novel atomically thin wall, optimal Fermi level and abundant chemisorbed oxygen.