4.7 Article

Semi-transparent reduced graphene oxide temperature sensor on organic light-emitting diodes for fingerprint liveness detection of smartphone authentication

期刊

SENSORS AND ACTUATORS A-PHYSICAL
卷 331, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2021.112876

关键词

Graphene oxide; Reduced graphene oxide; Organic light-emitting diode; Laser irradiation; Temperature sensor; Fingerprint sensor

资金

  1. Sookmyung Women's University Research Grants [1-2103-2001]
  2. Electronics and Telecommunications Research Institute (ETRI) - Korean government [21ZB1200]
  3. Korea Evaluation Institute of Industrial Technology (KEIT) - Ministry of Trade, Industry & Energy (MOTIE, Korea) [20015805]
  4. National Research Foundation of Korea (NRF) - Korea government (MSIT) [2021R1F1A1045517]
  5. Korea Evaluation Institute of Industrial Technology (KEIT) [20015805] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  6. National Research Foundation of Korea [2021R1F1A1045517] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

A semi-transparent temperature sensor was fabricated on an OLED for fingerprint liveness detection, showing significant resistance variation when touched by a finger. The effect of photothermal reduction energy on GO in OLEDs was investigated, resulting in decreased device luminance. Despite the absorption of rGO, the current-voltage characteristics and electroluminescence spectrum remained similar to devices without laser irradiation.
We report a semi-transparent temperature sensor for fingerprint liveness detection on an organic lightemitting diode (OLED). Solution-processable graphene oxide was coated between two indium tin oxide electrodes on a glass substrate, and a semi-transparent reduced graphene oxide (rGO) temperature sensor was successively fabricated through graphene oxide (GO) reduction using a laser source. The rGO temperature sensor showed a resistance variance characteristic of 80 % compared to the initial resistance when heated from 15 degrees C to 170 degrees C. When finger was touched on the rGO temperature sensor, the resistance variation was 0.5 % and 7 % at 35 degrees C and 50 degrees C, respectively. In addition, GO was coated on the light-emitting side of green phosphorescent OLEDs to investigate the damage caused by photothermal reduction energy. The OLEDs irradiated by the laser source for GO reduction showed nearly the same current-voltage characteristics and electroluminescence spectrum as the device without laser irradiation, although the luminance of the device decreased due to the absorption of rGO. (C) 2021 Elsevier B.V. All rights reserved.

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