4.4 Article

Linear bounded potential model for semiconductor band bending

期刊

出版社

IOP Publishing Ltd
DOI: 10.1088/1361-6641/ac4a20

关键词

semiconductors; band bending; surface

资金

  1. CONICET-Argentina
  2. SCAIT [26/E653, PIP 585]

向作者/读者索取更多资源

This study proposes a simple and unexplored model for describing the semiconductor band bending, aiming to obtain a simple expression for calculating the energy spectrum and analytical expressions for wave-functions of confined levels. The model takes into account the charge balance and is applicable to electron or hole confinement potential.
We propose a simple but unexplored model for the semiconductor band bending with the aim to obtain a relatively simple expression to calculate the energy spectrum for the confined levels and the analytical expressions for wave-functions. This model consists of a linear potential but it is bounded or trimmed in energy unlike the well known wedge potential (WP) model. We present exact solutions for this potential in the frame of the effective mass approximation and they are valid for electron or hole confinement potential. This model provides a more adequate physical scenario than the WP since it takes into account the charge balance involved in the band bending potential. These results allow to treat confined potential problems as in the case of a two-dimensional electron gas in a simplified way. We discuss the application of this approximation to the recombination time of electrons an holes and for the Franz-Keldysh effect.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据