4.7 Article

Synthesis of Cs2TeI6 thin film and its NO2 gas-sensing properties under blue-light illumination

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Synthesis of Cs2SnI6 perovskite thin film by low-pressure chemical vapor deposition method

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Summary: A low-pressure chemical vapor deposition method was proposed to synthesize continuous Cs2SnI6 thin films, with varied deposition parameters and annealing treatment to enhance stability and properties. The Cs2SnI6 film remained stable in ambient air for 30 days after annealing in SnI4, exhibiting n-type semiconducting behavior with improved optical and electrical characteristics.

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