Spin logic operations based on magnetization switching by asymmetric spin current

Spintronic devices based on spin orbit torques (SOT) exhibit advantages in low power consumption, high speed, reconfigurability, and high endurance, which offers the prospect of in-memory computing based on spin logic devices. By designing a local spin current gradient, the magnetization can be switched deterministically by asymmetric spin currents without external magnetic field using micromagnetic simulations, where an additional out of plane effective field can be generated by the spin gradient. Through capping half of the Pt/Co/Pt SOT devices with Pt strip, we demonstrate the field-free deterministic current-induced magnetization switching experimentally. Finally, we design AND, NAND, OR, and NOR Boolean logic gates based on these devices, which could be used as building blocks for programmable and stateful logic operations.

Automated summary

Spintronic devices based on spin orbit torques offer advantages in low power consumption, high speed, reconfigurability, and high endurance. By designing a local spin current gradient, magnetization can be switched deterministically without external magnetic field. Experimental results demonstrate the feasibility of field-free deterministic current-induced magnetization switching and logic gates based on these devices.