4.5 Review

A review of laser ablation and dicing of Si wafers

出版社

ELSEVIER SCIENCE INC
DOI: 10.1016/j.precisioneng.2021.10.001

关键词

Silicon wafer; Copper stabilization layer; Laser dicing; Laser-material interaction; Laser ablation mechanism; Laser ablation rate; Laser ablation quality; die fracture strength

向作者/读者索取更多资源

This article reviews the physics of laser-material interaction in Si wafer dicing, discussing the effects of laser settings, dicing parameters, and material factors on ablation rate and quality, as well as approaches to improve cutting methods.
Over the last decade, lasers have been gradually employed for Si wafer dicing to replace blade dicing. Laser dicing has the potential to replace blade dicing as the future generation ultrathin wafer singulation method as it enables higher cutting speed, lower damage, and smaller kerf width but various technical challenges still remain to be resolved. In this article, laser ablation and dicing of Si wafers are reviewed in terms of the physics of lasermaterial interaction based on nanosecond, picosecond, and femtosecond pulse durations. The effects of various laser settings, dicing process parameters, and material factors on ablation rate, ablation precision and quality, and die fracture strength are discussed in detail. With the increasing usage of Cu stabilization layer on the backside of ultrathin Si wafers, we also review laser-material interaction in Cu and elaborate on recent findings on the effects of laser dicing through Si and Cu simultaneously on the microstructural and fracture strength properties of the die. Various approaches to improve the ablation rate, ablation quality, and die fracture strength are discussed.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据