Compositional gradients at the nanoscale in substoichiometric thin films deposited by magnetron sputtering at oblique angles: A case study on SiOx thin films

We demonstrate the existence of stoichiometric variations at the nanoscale when growing nanocolumnar SiOx thin films by reactive magnetron sputtering deposition at oblique angles. Results show stoichiometric variations in the range 0.3 < x < 1.3 when growing a SiO0.5 thin film. This agrees with results from a numerical growth model that obtains a shift of the stoichiometry in all nanocolumns from lower values at the side facing the Si target to higher values at the opposite side. The different momentum distribution of the gaseous reactive and sputtered species results in preferential incorporation of the latter at a particular side of the nanocolumns. The general occurrence of this mechanism during the reactive magnetron sputtering deposition of substoichiometric thin films at oblique angles is discussed.

Automated summary

The existence of stoichiometric variations at the nanoscale when growing nanocolumnar SiOx thin films by reactive magnetron sputtering deposition at oblique angles is demonstrated. Results show stoichiometric variations in the range 0.3 < x < 1.3 when growing a SiO0.5 thin film. The preferential incorporation of sputtered species at a particular side of the nanocolumns due to different momentum distribution of the gaseous reactive and sputtered species is discussed.