期刊
PHYSICAL REVIEW LETTERS
卷 127, 期 16, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.127.166802
关键词
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资金
- ARO MURI [W911NF-14-1-0247]
- NSF DMREF Grant [1922165]
- STC Center for Integrated Quantum Materials, NSF [DMR-1231319]
- National Science Foundation through the National Nanotechnology Coordinated Infrastructure (NNCI) [ECCS-2025124]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1922165] Funding Source: National Science Foundation
This study demonstrates a higher-order moire of moire superlattice in twisted trilayer graphene, showing correlated insulating states near the half filling of the moire superlattice at an extremely low carrier density, where zero-resistance transport behavior is also observed. The full-occupancy states are semimetallic and gapless, distinct from the twisted bilayer systems.
Layers of two-dimensional materials stacked with a small twist angle give rise to beating periodic patterns on a scale much larger than the original lattice, referred to as a moire superlattice. Here, we demonstrate a higher-order moire of moire superlattice in twisted trilayer graphene with two consecutive small twist angles. We report correlated insulating states near the half filling of the moire of moire superlattice at an extremely low carrier density (similar to 10(10) cm(-2)), near which we also report a zero-resistance transport behavior typically expected in a 2D superconductor. The full-occupancy (nu = -4 and nu = 4) states are semimetallic and gapless, distinct from the twisted bilayer systems.
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