期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 24, 期 11, 页码 6616-6626出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d2cp00086e
关键词
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资金
- National Natural Science Foundation of China [61974056, 62174016, 62074019, 62104084]
- Key Research and Development Program of Jiangsu Province [BE2020756]
- Natural Science Foundation of Jiangsu Province [BK20190576]
- Suzhou Science and Technology Project [SZS2020313]
- Fundamental Research Funds for Central Universities [JUSRP22032]
- Science and Technology Development Foundation of Wuxi [N20191002]
- Postgraduate Research & Practice Innovation Program of Jiangsu Province [KYCY20_1769]
The study reveals that two-dimensional MoSi2N4 is a suitable channel material for high-performance transistors due to its high carrier mobility, appropriate band gap, and good environmental stability. By performing ab initio quantum-transport calculations, the performance of double-gate MOSFETs based on monolayer MoSi2N4 is predicted. The results show excellent on-state current and performance metrics.
The high carrier mobility, appropriate band gap and good environmental stability of two-dimensional (2D) MoSi2N4 enable it to be an appropriate channel material for transistors with excellent performance. Therefore, we predict the performance of double-gate (DG) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on monolayer (ML) MoSi2N4 by ab initio quantum-transport calculations. The results show that the on-state current of the p-type device is remarkable when the gate length is greater than 4 nm, which can meet the high performance requirements of the International Technology Roadmap for Semiconductors (ITRS), 2013 version. Moreover, the gate length can be reduced to 3 nm when an underlap (UL) structure is employed in the MOSFET, and the sub-threshold swing, intrinsic delay time and power consumption also perform well. The calculation results reveal that ML MoSi2N4 will be a promising alternative for transistor channel materials in the post-silicon era.
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